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Updated: Mar 7, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Improving the electrical properties of carbon nanotubes with interhalogen compounds
Dawid Janas1, Karolina Z Milowska2, Paul D Bristowe2
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, CB3 0FS Cambridge, UK. dj295@cam.ac.uk and Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, 44-100 Gliwice, Poland.
Abstract:
The electronic properties of carbon nanostructures such as carbon nanotubes (CNTs) or graphene can easily be tuned by the action of various doping agents. We present an experimental study and numerical analysis of how and why metallic and semiconductive CNTs can be p-doped by exposing them to two interhalogens: iodine monochloride and iodine monobromide. Simple application of these compounds was found to reduce the electrical resistance by as much as 2/3 without causing any unfavorable chemical modification, which could disrupt the highly conductive network of sp2 carbon atoms. To gain better insight into the underlying mechanism of the observed experimental results, we provide a first principles indication of how interhalogens interact with model metallic (5,5) and semiconductive (10,0) CNTs.
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