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Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

S Conesa-Boj1,2, A Li1,2, S Koelling2

  • 1Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The Netherlands.

Nano Letters
|February 24, 2017
PubMed
Summary

Germanium-Silicon core-shell nanowires show enhanced hole mobility due to controlled strain. This breakthrough advances potential applications in next-generation electronic and quantum transport devices.

Keywords:
Nanowiredefect-freeepitaxygermaniummobilitysilicon

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