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Intersubband transition in lattice-matched BGaN/AlN quantum well structures with high absorption coefficients

Seoung-Hwan Park, Doyeol Ahn, Chan-Yong Park

    Optics Express
    |March 1, 2017
    PubMed
    Summary

    Lattice-matched Boron Gallium Nitride/Aluminum Nitride (BGaN/AlN) quantum wells show enhanced intersubband absorption. This improvement makes them suitable for telecommunication applications, offering an alternative to strained Gallium Nitride/Aluminum Nitride (GaN/AlN) quantum wells.

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