Related Experiment Video
Updated: Mar 7, 2026
14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
15.5K
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.
Optics Express
|March 1, 2017
Summary
We developed high-performance quantum dot lasers on silicon substrates for data communication. These lasers operate at telecom wavelengths with low thresholds and high-temperature stability, crucial for scalable datacenter interconnects.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Scalable datacenter interconnects require high-performance III-V lasers integrated with silicon photonics.
- Existing integration methods often involve complex buffer layers or substrate modifications.
Purpose of the Study:
- To demonstrate electrically injected quantum dot lasers on on-axis (001) silicon.
- To achieve lasing at datacom and telecom wavelengths without additional germanium buffers or substrate miscut.
Main Methods:
- Growth of InAs/InGaAs quantum dots in a well structure on patterned (001) silicon using {111} v-grooves.
- Fabrication and characterization of electrically injected lasers.
Main Results:
- Continuous wave lasing achieved on on-axis (001) silicon.
- Low threshold currents as low as 36 mA.
- Stable laser operation up to 80°C.
Conclusions:
- Demonstrated a viable method for integrating high-performance III-V quantum dot lasers onto silicon.
- The approach eliminates the need for Ge buffers and substrate miscut, simplifying fabrication.
- The results pave the way for scalable silicon photonics in datacenters.
