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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Crystalline zirconium titanate (ZrTiO4) is investigated as a charge-trapping layer for flash memory.
  • Un-treated ZrTiO4 exhibits poor charge storage due to oxygen vacancies creating shallow traps.
  • CF4 plasma treatment fails to improve charge storage due to subsequent thermal annealing effects.

Purpose of the Study:

  • To explore the effects of different plasma treatments on ZrTiO4 for low-voltage flash memory applications.
  • To understand the mechanisms behind charge trapping and retention in treated ZrTiO4.
  • To optimize ZrTiO4 as a charge-trapping layer for improved memory performance.

Main Methods:

  • Fabrication of crystalline ZrTiO4 films.
  • Application of different plasma treatments (N2O, CF4) to ZrTiO4.
  • Electrical characterization including memory window, flatband voltage shift, endurance, and retention tests.
  • Analysis of trap mechanisms using thermal excitation and energy level identification.

Main Results:

  • N2O plasma treatment yields a 5-V hysteresis memory window with ±7-V sweeping voltage.
  • A 2.8-V flatband voltage shift is achieved with programming at +7V for 100μs.
  • Negligible memory window degradation after 10^5 program/erase cycles and 81.8% charge retention after 10^4 seconds at 125°C.
  • N2O treatment passivates oxygen vacancies and introduces deep-level traps (0.84-1.03 eV below conduction band).

Conclusions:

  • N2O plasma treatment is highly effective in improving ZrTiO4 charge-trapping properties for flash memory.
  • The improved performance is attributed to defect passivation and the introduction of stable deep-level traps.
  • Optimized ZrTiO4 offers promising potential for reliable low-voltage flash memory operation.