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Updated: Mar 6, 2026
In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells
Published on: October 3, 2018
Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se2 absorber based thin film photovoltaic cell
Md Asaduzzaman1, Ali Newaz Bahar1, Mohammad Maksudur Rahman Bhuiyan2
1Department of Information and Communication Technology (ICT), Mawlana Bhashani Science and Technology University (MBSTU), Tangail 1902, Bangladesh.
Abstract:
The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage [Formula: see text], short circuit current density [Formula: see text], fill factor [Formula: see text], efficiency [Formula: see text], and collection efficiency [Formula: see text] have been analyzed.
