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Published on: July 24, 2015
Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon
Udit Narula1,2, Cher Ming Tan1,2,3,4,5, Chao Sung Lai2,6,7
1Center for Reliability Sciences &Technologies, Chang Gung University, 259, Wen-Hwa 1st Road, Kwei-Shan, Taoyuan, 33302, ROC Taiwan.
Abstract:
Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.
