Diameter Tuning of β-Ga₂O₃ Nanowires Using Chemical Vapor Deposition Technique

Diameter tuning of [Formula: see text]-Ga₂O₃ nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga₂O₃ nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.