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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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0-π phase-controllable thermal Josephson junction.

Antonio Fornieri1, Giuliano Timossi1, Pauli Virtanen1

  • 1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy.

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Summary
This summary is machine-generated.

Researchers created a controllable thermal Josephson junction, enabling precise control over heat current direction. This breakthrough paves the way for novel caloritronic devices and improved energy management in quantum computing.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Technologies
  • Nanoscale Heat Transfer

Background:

  • Josephson junctions exhibit unique quantum phenomena in electrical currents.
  • Thermal analogues of the Josephson effect involve coherent heat transfer.
  • Controlling the phase bias in thermal Josephson junctions is challenging.

Purpose of the Study:

  • To experimentally realize a thermal Josephson junction with controllable phase bias.
  • To demonstrate precise control over coherent energy transfer direction.
  • To explore applications in caloritronic logic devices.

Main Methods:

  • Utilized a superconducting quantum interferometer to control the phase bias (ϕ) from 0 to π.
  • Fabricated a completely superconducting system for thermal transport measurements.
  • Measured temperature modulations and transfer coefficients at cryogenic temperatures (25 mK).

Main Results:

  • Achieved the first experimental realization of a phase-bias-controllable thermal Josephson junction.
  • Demonstrated unprecedented temperature modulations of ~100 mK.
  • Observed high transfer coefficients exceeding 1 K per flux quantum.

Conclusions:

  • The developed quantum structure is a fundamental step towards caloritronic logic components.
  • Enables realization of thermal transistors, switches, and memory devices.
  • Offers potential benefits for cryogenic microcircuits, quantum computing, and radiation sensors.