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Defect Coupling and Sub-Angstrom Structural Distortions in W1-xMoxS2 Monolayers
Amin Azizi1, Yuanxi Wang1, Greg Stone1
1Department of Materials Science and Engineering, ‡Center for Two-Dimensional and Layered Materials, §Materials Research Institute, ∥Department of Physics, ⊥Department of Chemistry, The Pennsylvania State University , University Park, Pennsylvania 16802, United States.
Molybdenum (Mo) dopants preferentially bind to sulfur vacancies in tungsten disulfide (WS₂) monolayers. This coupling influences lattice structure and offers a method to control defect locations in two-dimensional materials.
Area of Science:
- Materials Science
- Atomic Physics
- Condensed Matter Physics
Background:
- Two-dimensional (2D) materials possess unique properties tunable by doping.
- Local atomic structure around dopants critically influences material behavior.
- Understanding dopant-defect interactions is key for tailoring 2D material properties.
Purpose of the Study:
- Investigate the coupling between Molybdenum (Mo) dopants and defects in tungsten disulfide (WS₂) monolayers.
- Determine the local atomic structure around Mo dopants and its effect on WS₂.
- Explore the potential for controlling defect distribution in 2D materials.
Main Methods:
- Aberration-corrected scanning transmission electron microscopy (STEM) with sub-Ångstrom resolution.
- First-principles density functional theory (DFT) calculations.
- Analysis of dopant-defect colocalization and lattice distortions.
Main Results:
- Mo dopants show a strong affinity for sulfur monovacancies in WS₂ monolayers (~80% colocalization).
- Mo dopants facilitate the charging and induce lattice deformation around paired sulfur vacancies.
- A partially occupied midgap defect state enhances the Mo-vacancy affinity.
Conclusions:
- Mo is not an ideal substitutional dopant in WS₂, exhibiting significant coupling with vacancies.
- This dopant-vacancy coupling can be leveraged to control chalcogenide vacancy distribution in transition metal dichalcogenides (TMDs).
- Strategic placement of Mo can segregate vacancies away from active device regions in TMDs.
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