Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

Area of Science:

• Condensed Matter Physics
• Materials Science
• Topological Materials

Background:

• Topologically non-trivial half-Heusler semimetal LuPtBi exhibits ultrahigh mobility and large positive magnetoresistance.
• Its fcc structure and electron-hole compensation lead to complex Fermi surfaces with anisotropic electron and spherical hole pockets.

Purpose of the Study:

• To map the Fermi surface of LuPtBi using angle-dependent magnetotransport measurements.
• To investigate potential magnetic field-driven changes in the Fermi surface at low temperatures.
• To understand the underlying physics of observed Fermi surface alterations.

Main Methods:

• Angle-dependent transverse magnetoresistance measurements.
• High-field Shubnikov-de Haas (SdH) quantum oscillations.
• Analysis of magnetotransport properties related to Fermi surface geometry.

Main Results:

• Detailed mapping of the Fermi surface, revealing six anisotropic electron pockets in the high-temperature, low-field regime.
• Identification of a magnetic field-induced Fermi surface change at lower temperatures.
• Correlation of the Fermi surface change with field-induced electron evacuation due to Landau quantization.

Conclusions:

• LuPtBi's Fermi surface exhibits complex behavior under magnetic fields.
• The study provides insights into exotic physics and potential device applications of topological semimetals.
• Field-induced Landau quantization plays a crucial role in modifying the electron pockets.