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Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
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Related Experiment Video

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Gradient Echo Quantum Memory in Warm Atomic Vapor
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Transparent Memory For Harsh Electronics.

C H Ho1, J R Durán Retamal2, P K Yang2

  • 1Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.

Scientific Reports
|March 15, 2017
PubMed
Summary
This summary is machine-generated.

Aluminum nitride (AlN)-based resistive random access memory (RRAM) shows excellent performance and stability. This transparent RRAM (TRRAM) is reliable in harsh environments and under proton irradiation, paving the way for robust transparent electronics.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Resistive random access memory (RRAM) is a promising non-volatile memory technology.
  • RRAM offers advanced functionalities like transparency and radiation hardness.
  • Environmental tolerance and material stability are critical challenges for RRAM deployment.

Purpose of the Study:

  • To investigate the performance and environmental stability of AlN-based RRAM.
  • To evaluate the reliability of transparent RRAM (TRRAM) based on AlN under harsh conditions.
  • To demonstrate the potential of AlN TRRAM for transparent and radiation-hard electronics.

Main Methods:

  • Fabrication and characterization of AlN-based RRAM devices.
  • Endurance testing over 100 cycles to assess resistance ratio stability.
  • Exposure of TRRAM devices to four different harsh environmental conditions.
  • Proton irradiation testing with 2 MeV protons at fluences from 10^11 to 10^15 cm^-2.

Main Results:

  • AlN-based RRAM demonstrated excellent performance and stability.
  • No significant degradation in the resistance ratio was observed over 100 endurance cycles.
  • AlN TRRAM maintained reliable performance under various harsh environmental conditions.
  • TRRAM devices showed robust functionality even after 2 MeV proton irradiation at high fluences.

Conclusions:

  • AlN-based RRAM exhibits superior environmental tolerance and endurance.
  • AlN TRRAM is a viable candidate for applications requiring transparency and radiation hardness.
  • This study provides crucial insights for designing reliable transparent electronics for harsh environments.