Universal modeling of weak antilocalization corrections in quasi-two-dimensional electron systems using predetermined...

Area of Science:

• Condensed Matter Physics
• Materials Science
• Quantum Mechanics

Background:

• Weak localization and antilocalization phenomena are crucial for understanding electron transport in materials.
• Spin-orbit interactions (SOI) significantly influence electronic properties in low-dimensional systems.
• Accurate theoretical models are needed to predict and analyze these effects in novel 2D materials.

Purpose of the Study:

• To develop a novel, efficient real-space simulation method for calculating weak localization and antilocalization corrections.
• To provide a versatile computational tool applicable to various one-electron interactions and spin-orbit couplings.
• To investigate the robustness of the persistent spin helix state against different SOI types.

Main Methods:

• Real-space simulation utilizing predetermined return orbitals for quasi-two-dimensional electrons.
• Incorporation of up to 5000 scattering events with repeated use of orbitals.
• Model subsumes existing methods (e.g., Golub's) for Rashba spin-orbit interaction.

Main Results:

• The computation is simple, fast, and versatile, yielding results for wide magnetic field ranges and various interactions simultaneously.
• Demonstrated straightforward extensibility to include linear and cubic Dresselhaus SOIs, Zeeman effect, and valley/pseudo-spin interactions.
• Confirmed the robustness of the persistent spin helix state against cubic Dresselhaus SOI.

Conclusions:

• The developed real-space simulation method offers a powerful and adaptable tool for studying electron transport phenomena in emerging 2D materials.
• The approach facilitates the investigation of complex spin-orbit interactions and their impact on electronic properties.
• This work provides a foundation for exploring new quantum phenomena in advanced material systems.