Electrostatic Boundary Conditions in Dielectrics
The Electrical Double Layer
Imperfections in Crystal Structure: Stoichiometric Point Defects
Electrostatic Boundary Conditions
Potential Due to a Polarized Object
Imperfections in Crystal Structure: Point, Line and Plane Defects
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Mar 6, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Ravishankar Sundararaman1, Yuan Ping2
1Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
We developed a new method to accurately align electrostatic potentials in materials science calculations. This approach improves predictions for band offsets and charged defect formation energies, making complex simulations more reliable.
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: