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Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

Wei Li1, Hongxia Liu2, Shulong Wang3

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.

Nanoscale Research Letters
|March 19, 2017
PubMed

Keywords:
Band-to-band tunneling (BTBT)HeterojunctionT-shaped gateTunneling field-effect transistor (TFET)

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