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Van der Waals Interactions01:24

Van der Waals Interactions

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Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
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Fabricating van der Waals Heterostructures with Precise Rotational Alignment
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Recent progress in van der Waals heterojunctions.

Wanshun Xia1, Liping Dai2, Peng Yu3

  • 1State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China. dlp@uestc.edu.cn and Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China. zhmwang@uestc.edu.cn.

Nanoscale
|March 21, 2017
PubMed
Summary
This summary is machine-generated.

Van der Waals heterojunctions (vdWHs) offer unique properties for advanced electronics and optoelectronics. This review highlights their development, physical characteristics, and applications in devices like photodiodes and memory.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials have enabled the development of van der Waals heterojunctions (vdWHs).
  • vdWHs exhibit desirable properties like tunable bandgaps and efficient carrier transport.
  • These heterojunctions are crucial for next-generation electronic and optoelectronic devices.

Purpose of the Study:

  • To review recent advancements in van der Waals heterojunctions (vdWHs).
  • To emphasize the diverse applications of vdWHs in electronic and optoelectronic devices.
  • To provide a foundation for future research in vdW-based materials.

Main Methods:

  • Literature review of recent developments in vdWHs.
  • Introduction to the physical properties and phenomena in vdWHs.
  • Presentation of classical and novel vdWHs and heterostructures.

Main Results:

  • Summarized recent progress in vdWH materials and fabrication.
  • Detailed the physical properties and novel phenomena observed in vdWHs.
  • Highlighted key applications including photodiodes, phototransistors, tunneling, and memory devices.

Conclusions:

  • vdWHs demonstrate significant potential in electronic and optoelectronic applications.
  • The unique properties of vdWHs facilitate integration with existing semiconductor technologies.
  • This review serves as a comprehensive resource and outlook for vdW-based materials research.