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Ultrathin (Bi1-xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio
Yu-Hung Liu, Cheong-Wei Chong, Chun-Ming FanChiang
1Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei 10622, Taiwan.
Abstract:
Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1-xSbx)2Se3 ultrathin films were fabricated on SrTiO3 substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.
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