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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes
J Yang1, D G Zhao1,2, D S Jiang1
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China.
Abstract:
Three series of samples with different NH3 flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH3 may also play a negative effect on indium incorporation during InGaN growth. Especially, when temperature is relatively high, the hydrogen generated from the dissociation of NH3 may suppress the chemical reaction which produces InN, leading to a reduced indium incorporation efficiency during the InGaN layer growth.
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