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Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by

Lei Zhang1, Liang Zhu1, Xiaomei Li1

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Scientific Reports
|March 22, 2017
PubMed

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