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Updated: Mar 6, 2026

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Published on: October 23, 2018
A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2
Yu Su1, Yoshihiro Tsujimoto2, Akira Miura3
1Research Centre for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. SU.Yu@nims.go.jp TSUJIMOTO.Yoshihiro@nims.go.jp and Graduate School of Chemical Sciences and Engineering, Hokkaido University, North 13 West 8, Kita-ku, Sapporo 060-0808, Japan.
Abstract:
A new square-planar zinc oxyhalide, Sr2ZnO2Cl2, was successfully synthesized using a high-pressure method. Absorption spectroscopy revealed an indirect band gap of 3.66 eV. Electronic structure calculations indicated a strong hybridization between Zn 3dx and O 2p orbitals, which is distinct from tetrahedrally coordinated ZnO.
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