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Rectifying Characteristics and Semiconductor-Metal Transition Induced by Interfacial Potential in the Mn3CuN/n-Si

Kewen Shi1, Cong Wang1, Ying Sun1

  • 1Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.

ACS Applied Materials & Interfaces
|March 22, 2017
PubMed

Keywords:
antiperovskite compoundinterfaceintermetallic heterojunction deviceinversion layerrectifying characteristicssemiconductor−metal transition

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