Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.4K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.4K
Types of Semiconductors01:20

Types of Semiconductors

1.6K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.6K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
P-N junction01:11

P-N junction

1.5K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.5K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

726
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
726
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.3K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

In operando imaging of the space-charge region in a 4H-SiC MOSCAP using STEM-EBIC.

Journal of microscopy·2026
Same author

High angular resolution diffusion imaging of neurodevelopment in children through data creation with deep learning.

Scientific reports·2026
Same author

Cerebellar magnetization transfer ratio and its relationship to clinical outcomes in radiologically isolated syndrome and multiple sclerosis.

Multiple sclerosis (Houndmills, Basingstoke, England)·2026
Same author

Intravenous leiomyomatosis manifesting as a cardiac mass: a case report.

Frontiers in cardiovascular medicine·2026
Same author

Environmental Heavy Metal Pollution Disrupts Heading in Major Cereal Crops: Mechanisms and Implications for Food Security.

Environmental research·2026
Same author

Unraveling Solvent-Independent Excited State Proton Transfer Dynamics in Sterically Substituted Photoactive Systems.

The journal of physical chemistry letters·2026

Related Experiment Video

Updated: Mar 5, 2026

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
11:30

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

Published on: March 6, 2017

12.3K

Nonradiative Step Facets in Semiconductor Nanowires.

Ana M Sanchez1, Yunyan Zhang2, Edward W Tait3

  • 1Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom.

Nano Letters
|March 25, 2017
PubMed
Summary
This summary is machine-generated.

Stable step facets in semiconductor nanowires, unlike dislocations, do not cause strain. These specific facets, appearing as multiples of three monolayers, act as nonradiative recombination centers, negatively impacting nanowire properties.

Keywords:
DFTNanowireSTEMdefectsstep facets

More Related Videos

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

5.0K
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

6.1K

Related Experiment Videos

Last Updated: Mar 5, 2026

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
11:30

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

Published on: March 6, 2017

12.3K
Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

5.0K
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

6.1K

Area of Science:

  • Materials Science
  • Semiconductor Nanostructures
  • Crystallography

Background:

  • Nanowires are advantageous for functional applications due to their high perfection, often attributed to surface forces expelling line defects like dislocations.
  • However, a specific class of stable step facets has been identified in nanowires, distinct from dislocations and lacking long-range strain fields.

Purpose of the Study:

  • To investigate the nature and impact of stable step facets in zinc-blende semiconductor nanowires.
  • To understand the role of these facets as nonradiative recombination centers and their effect on nanowire properties.
  • To identify strategies for preventing the formation of these detrimental defects during nanowire growth.

Main Methods:

  • Theoretical analysis of stable step facets in zinc-blende semiconductors, specifically Σ3 (112) facets.
  • Density functional theory (DFT) calculations to assess the electronic properties and recombination behavior of these facets.
  • Experimental observation of defects on twin boundaries and internal twins within Gallium Arsenide Phosphide (GaAsP) nanowires.

Main Results:

  • Identified stable Σ3 (112) facets in zinc-blende semiconductor nanowires with heights restricted to multiples of three {111} monolayers.
  • DFT calculations confirmed these facets function as nonradiative recombination centers, degrading nanowire performance.
  • Experimental observations corroborated the three-monolayer height rule for these defects in GaAsP nanowires.

Conclusions:

  • Stable step facets, characterized by three-monolayer height multiples, are intrinsic defects in semiconductor nanowires.
  • These facets significantly impair nanowire functionality by acting as nonradiative recombination centers.
  • Implementing growth strategies adhering to the three-monolayer rule is crucial for defect prevention and optimizing nanowire properties.