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Quantum Capacitance of a Topological Insulator-Ferromagnet Interface.
Zhuo Bin Siu1, Debashree Chowdhury2, Mansoor B A Jalil1
1Computational Nanoelectronics and Nanodevices Laboratory, National University of Singapore, Singapore.
Scientific Reports
|March 25, 2017
Summary
We investigated quantum capacitance in topological insulator thin films. Hexagonal warping negatively impacts capacitance, while in-plane magnetization causes energy oscillations, except in specific conditions where it has no effect.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Topological insulators possess unique electronic properties.
- Quantum capacitance is crucial for understanding charge storage in materials.
- Thin film heterostructures offer tunable electronic behavior.
Purpose of the Study:
- To analyze quantum capacitance in magnetized topological insulator thin films.
- To investigate the effects of hexagonal warping and in-plane magnetization.
- To explore the influence of an out-of-plane magnetic field.
Main Methods:
- Theoretical modeling of quantum capacitance.
- Analysis of energy-dependent capacitance modifications.
- Examination of interplay between magnetic fields and material properties.
Main Results:
- Hexagonal warping leads to a negative modification of quantum capacitance.
- This negative effect increases with energy deviation from charge neutrality.
- In-plane magnetization induces energy-oscillating changes in quantum capacitance, with exceptions.
Conclusions:
- Quantum capacitance is sensitive to both hexagonal warping and in-plane magnetization.
- Specific conditions can lead to magnetization-independent quantum capacitance.
- Findings provide insights into tuning electronic properties of topological insulators.
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