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Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Kun Ba1, Wei Jiang1, Jingxin Cheng2
1The Department of Chemistry, Fudan University, Shanghai, 20433, China.
Scientific Reports
|April 4, 2017
Summary
Researchers chemically synthesized hexagonal boron nitride (h-BN) derivatives, tuning their bandgap to ~2 eV. This work enables new semiconducting h-BN materials with tunable electronic properties.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Monolayer hexagonal boron nitride (h-BN) is a wide bandgap semiconductor (~6 eV).
- Reducing the bandgap of h-BN is desirable for electronic applications but challenging.
- Strategies include structural modification (defects, grain boundaries) or incorporating foreign atoms (e.g., carbon).
Purpose of the Study:
- To develop a general chemical method for synthesizing diverse h-BN derivatives.
- To demonstrate the manipulation of h-BN's chemical structure.
- To tune the bandgap of h-BN materials to lower values.
Main Methods:
- A general chemical synthesis approach was employed.
- h-BN derivatives were created with and without graphene precursors.
- Structural modifications and foreign atom incorporation were utilized.
Main Results:
- Successfully synthesized various h-BN derivatives.
- Demonstrated control over chemical structure manipulation.
- Achieved a significant bandgap reduction to ~2 eV, one-third of the pristine h-BN bandgap.
Conclusions:
- A versatile chemical method for creating tunable bandgap h-BN materials was established.
- The developed method allows for the synthesis of semiconducting h-BNC materials.
- This advancement opens possibilities for novel electronic and optoelectronic devices.