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Low-Temperature Atomic Layer Deposition of MoS2 Films
Titel Jurca1, Michael J Moody2, Alex Henning2
1Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
Angewandte Chemie (International Ed. in English)
|April 4, 2017
Summary
Molybdenum disulfide (MoS2) thin films can now be synthesized at record low temperatures of 60°C using a novel precursor, Mo(NMe2)4. This breakthrough enables easier fabrication of MoS2-based devices using photolithography.
Area of Science:
- Materials Science
- Chemical Engineering
- Nanotechnology
Background:
- Molybdenum disulfide (MoS2) is a crucial material for next-generation electronics and catalysis.
- Traditional synthesis methods for MoS2 thin films often require high temperatures, limiting substrate compatibility and device fabrication processes.
Purpose of the Study:
- To investigate Molybdenum(N-dimethylamide)4 (Mo(NMe2)4) as a volatile precursor for atomic layer deposition (ALD) of MoS2.
- To achieve low-temperature synthesis of MoS2 thin films.
Main Methods:
- Wet chemical screening to identify precursor reactivity.
- Atomic Layer Deposition (ALD) using Mo(NMe2)4 and hydrogen sulfide (H2S).
- Characterization of as-deposited and annealed MoS2 films.
Main Results:
- Mo(NMe2)4 exhibits high reactivity with H2S for MoS2 synthesis.
- MoS2 films were successfully deposited at temperatures as low as 60°C.
- As-deposited films were amorphous but crystallized upon annealing.
- The low growth temperature is compatible with photolithographic and lift-off patterning.
Conclusions:
- Mo(NMe2)4 is a highly effective precursor for low-temperature ALD of MoS2.
- This method offers a significant advancement for fabricating complex MoS2-based devices at reduced thermal budgets.
- The developed technique opens new avenues for scalable MoS2 thin film production.