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Related Experiment Videos

Interlayer resistance of misoriented MoS2.

Kuan Zhou1, Darshana Wickramaratne, Supeng Ge

  • 1Department of Physics and Astronomy, University of California, Riverside, CA 92521-0204.

Physical Chemistry Chemical Physics : PCCP
|April 6, 2017
PubMed
Summary

Interlayer misorientation in transition metal dichalcogenides like MoS2 exponentially increases electron resistivity but not hole resistivity. This finding is crucial for designing new vertical transport electronic devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanoscience

Background:

  • Transition metal dichalcogenides (TMDs) exhibit unique properties influenced by interlayer stacking.
  • The impact of interlayer misorientation on electrical resistance in TMDs remains largely unexplored.
  • Understanding interlayer coupling is key to tailoring TMD electronic behavior.

Purpose of the Study:

  • To investigate the effect of interlayer misorientation on the interlayer resistance of bilayer Molybdenum Disulfide (MoS2).
  • To determine the relationship between misorientation angle and electron/hole resistivity in MoS2.
  • To explore the potential applications of misorientation-dependent transport in electronic devices.

Main Methods:

  • Utilized Density Functional Theory (DFT) to compute interlayer coupling elements.

Related Experiment Videos

  • Calculated electron and hole resistivity as a function of misorientation angle.
  • Analyzed the role of wave functions at high symmetry points in determining transport properties.

    • Main Results:

    • Interlayer misorientation was found to exponentially increase electron resistivity in bilayer MoS2.
    • Hole resistivity remained largely unaffected by changes in misorientation angle.
    • The observed physics are applicable to various semiconducting TMDs.

    Conclusions:

    • Interlayer misorientation has a significant, angle-dependent impact on electron transport in TMDs.
    • The asymmetric response of electron and hole transport to misorientation offers opportunities for device engineering.
    • This research paves the way for optimizing vertical transport devices, such as bipolar transistors, using controlled misorientation in TMDs.