Related Experiment Videos
Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping
Wee Chong Tan1, Yongqing Cai2, Rui Jie Ng1
1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
Advanced Materials (Deerfield Beach, Fla.)
|April 13, 2017
Summary
Black phosphorus carbide (b-PC) offers superior hole mobility in 2D semiconductors. This new material shows promise for infrared applications and advanced electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Black phosphorus carbide (b-PC) is a novel 2D semiconductor material.
- Theoretical predictions suggest b-PC possesses exceptionally light electrons and holes.
- This indicates potential for high charge carrier mobility.
Purpose of the Study:
- To fabricate and characterize a high-performance field-effect transistor based on few-layer b-PC.
- To investigate the charge transport properties and potential applications of b-PC.
- To optimize contact resistance for improved device performance.
Main Methods:
- Fabrication of a composite few-layer b-PC field-effect transistor using a novel carbon doping technique.
- Characterization of device performance, including hole mobility measurements at room temperature.
- Investigation of the material's absorption spectrum and contact resistance using nickel phosphide alloy contacts.
Main Results:
- Achieved a high hole mobility of 1995 cm² V⁻¹ s⁻¹ at room temperature.
- Demonstrated a low contact resistance of 289 Ω µm.
- Identified infrared absorption spectrum suitable for range finding applications.
Conclusions:
- Few-layer b-PC exhibits excellent electronic properties, surpassing theoretical predictions.
- The developed fabrication and contact methods enable high-performance devices.
- b-PC is a promising material for infrared optoelectronics and advanced semiconductor applications.