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Updated: Jul 23, 2026

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited
Zn1-xMgxO
Published on: July 31, 2016
Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water
J R Avila1, A W Peters, Zhanyong Li
1Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA. o-farha@northwestern.edu j-hupp@northwestern.edu.
Abstract:
To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).
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