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Large Positive Thermal Expansion and Small Band Gap in Double-ReO3-Type Compound NaSbF6.
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031, People's Republic of China.
Sodium hexafluoride antimonate (NaSbF6) exhibits significant positive thermal expansion (PTE), unlike related compounds. This behavior is linked to stiffened fluorine atom vibrations and Na-F bond elongation.
Area of Science:
- Materials Science
- Solid State Chemistry
- Crystallography
Background:
- Double-ReO3-type fluorides often display unusual thermal expansion properties, including negative thermal expansion (NTE).
- Understanding thermal expansion mechanisms in these materials is crucial for developing advanced functional materials.
Purpose of the Study:
- To investigate the phase transition and thermal expansion behavior of NaSbF6.
- To elucidate the underlying mechanisms responsible for its thermal expansion properties.
- To characterize the electronic band structure of NaSbF6.
Main Methods:
- Temperature-dependent X-ray diffractions were used to study phase transitions.
- Raman spectroscopy was employed to analyze atomic vibrations.
- First-principles calculations were performed to determine the electronic band gap.
Main Results:
- NaSbF6 undergoes a phase transition from rhombohedral to cubic between 303 and 323 K.
- The compound exhibits significant positive thermal expansion (PTE) with a volumetric coefficient of thermal expansion (αv) of 62 ppm/K in its cubic phase.
- Raman spectroscopy indicated stiffened low-frequency transverse vibrations of fluorine atoms, contrasting with NTE compounds.
- A relatively small band gap of 3.76 eV was observed, attributed to Sb 5s-F 2p orbital hybridization.
Conclusions:
- The large volumetric PTE in NaSbF6 is driven by the elongation of Na-F bonds overcoming polyhedral contraction.
- The stiffened fluorine vibrations contribute to its unique positive thermal expansion behavior.
- NaSbF6 possesses a smaller band gap compared to insulating ScF3 and CaZrF6, suggesting potential semiconductor properties.
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