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Related Experiment Videos

Hall Effect in Bulk-Doped Organic Single Crystals.

Chika Ohashi1,2, Seiichiro Izawa1,2, Yusuke Shinmura1,3

  • 1Institute for Molecular Science (IMS), 5-1 Higashiyama, Myodaiji, Okazaki, Aichi, 444-8787, Japan.

Advanced Materials (Deerfield Beach, Fla.)
|April 19, 2017
PubMed
Summary

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Researchers measured the Hall effect in bulk-doped organic single crystals for the first time. This study reveals high ionization rates and lattice scattering effects in doped rubrene single crystals.

Area of Science:

  • Materials Science
  • Organic Electronics
  • Solid-State Physics

Background:

  • The Hall effect measurement is standard for determining carrier concentration and mobility in inorganic crystals.
  • This technique has not been previously applied to bulk-doped organic single crystals.

Purpose of the Study:

  • To measure the Hall effect in bulk-doped organic single crystals.
  • To determine carrier concentration (N) and Hall mobility (μH) in these materials.
  • To investigate the properties of doped rubrene single crystals.

Main Methods:

  • Utilized an ultraslow co-deposition technique (as low as 10⁻⁹ nm s⁻¹).
  • Doped homoepitaxial organic single crystals with acceptors at extremely low concentrations (1 ppm).
  • Measured the Hall effect in bulk-doped rubrene single crystals.
Keywords:
Hall effecthigh ionization rateshomoepitaxial organic single crystalsultraslow co-deposition

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Main Results:

  • Successfully measured both hole concentration (N) and Hall mobility (μH) in bulk-doped rubrene single crystals.
  • Observed a band-like charge transport nature in the doped crystals.
  • Identified a high ionization rate in these organic single crystals.

Conclusions:

  • The Hall effect technique is applicable to bulk-doped organic single crystals.
  • Doped rubrene single crystals exhibit a high ionization rate.
  • Lattice disturbances cause scattering effects peculiar to this organic single crystal system.