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Related Experiment Videos

A graphene based frequency quadrupler.

Chuantong Cheng1,2,3, Beiju Huang1,3, Xurui Mao1,3

  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing, 100083, PR China.

Scientific Reports
|April 19, 2017
PubMed
Summary

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This summary is machine-generated.

Dual-gated graphene transistors achieve frequency quadrupling, concentrating 50% of RF power at the fourth harmonic. This demonstrates graphene

Area of Science:

  • Electronics
  • Materials Science
  • Physics

Background:

  • Graphene exhibits exceptional electrical transport properties, making it attractive for high-frequency electronics.
  • Graphene's lack of a bandgap suits analog circuits and frequency multiplication applications.
  • Ambipolar behavior in graphene is key to achieving high-performance frequency multipliers.

Purpose of the Study:

  • To demonstrate frequency quadrupling using dual-gated graphene field-effect transistors (GFETs).
  • To investigate the potential of graphene-based devices for ultrahigh-frequency electronic applications.

Main Methods:

  • Fabrication and characterization of dual-gated graphene field-effect transistors.
  • Application of a 200 kHz sinusoid input signal.

Related Experiment Videos

  • Tuning top-gate voltages to observe Dirac points and generate harmonics.

    • Main Results:

    • Achieved frequency quadrupling, concentrating approximately 50% of output RF power at 800 kHz from a 200 kHz input.
    • Demonstrated the capability of GFETs to function as frequency doublers and triplers.
    • Observed two Dirac points in transfer curves by adjusting top-gate voltages, crucial for fourth harmonic generation.

    Conclusions:

    • Dual-gated graphene transistors are effective for frequency quadrupling, offering potential for future ultrahigh-frequency electronics.
    • Graphene's properties and simple device structure provide advantages for advanced electronic applications.
    • The versatility of graphene supports the development of complementary metal-oxide-semiconductor compatible devices.