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Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor

K Takase1, Y Ashikawa2,3, G Zhang2

  • 1NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan. takase.keiko@lab.ntt.co.jp.

Scientific Reports
|April 21, 2017
PubMed
Summary

We developed a high-performance Indium Arsenide (InAs) nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) using a gate-all-around structure. This device achieves excellent performance and spin control for next-generation electronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • III-V semiconductors are explored for next-generation transistors surpassing silicon.
  • Indium Arsenide (InAs) offers high mobility and strong spin-orbit interaction for advanced FETs.
  • Metal-oxide-semiconductor field-effect transistors (MOSFETs) require high mobility, on-off ratio, and low power.

Purpose of the Study:

  • To report a high-performance InAs nanowire MOSFET with a gate-all-around (GAA) structure.
  • To demonstrate simultaneous control of spin precession via Rashba interaction in InAs nanowire MOSFETs.
  • To achieve low-power operation through efficient spin control and high device performance.

Main Methods:

  • Fabrication of InAs nanowire MOSFETs with a gate-all-around (GAA) architecture.
  • Integration of high-κ dielectric to create a uniform coaxial electric field.
  • Utilizing the Rashba spin-orbit interaction for spin control within the nanowire.

Main Results:

  • Achieved high on-off ratio (10^4~10^6) and field-effect mobility (1200 cm^2/Vs).
  • Demonstrated highly controllable Rashba coupling (1×10^-11 eVm) with a low gate voltage swing (1 V).
  • Generated a large, uniform coaxial electric field (>10^7 V/m) using GAA geometry and high-κ dielectric.

Conclusions:

  • The developed InAs nanowire MOSFET exhibits competitive performance and efficient spin control.
  • The GAA structure and high-κ dielectric enable low-voltage operation and precise control of spin properties.
  • This work presents a promising approach for low-power nanoscale spin MOSFETs.