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Secondary Sensitivity Control of Silver-Nanowire-Based Resistive-Type Strain Sensors by Geometric Modulation of the
Yunjeong Heo1, Youngkyu Hwang1, Hoon Sun Jung2
1School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju, 500-712, Republic of Korea.
Abstract:
A secondary method for modulation of the sensitivity in silver nanowire (AgNW) resistive-type strain sensors without the need to change the material or coating process in the sensory layer is demonstrated. Instead of using a planar elastomer (polydimethylsiloxane is used in this study) substrate, diverse relief structures are introduced to induce nonuniform and complex strain within the elastic substrate and thereby different distributions of the crack density of the AgNWs upon stretching, which plays an important role in the modulation of the gauge factor (GF). Analysis of the sensory layer and mechanical studies reveal that a lower height ratio and greater number of trenches enhance the sensor sensitivity, for example, reaching a GF of 926 at 9.6% in this study. The demonstration of wrist-motion sensors using the technology illustrates the feasibility of using relief structures for various types of sensors and sensitivity ranges using an identical sensor layer.