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High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor.

H W Hou1,2, Z Liu1, J H Teng3

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This study presents a high-temperature terahertz (THz) detector using a Gallium Nitride high electron mobility transistor (GaN HEMT) that operates effectively up to 200°C. The device demonstrates robust performance across a wide temperature range for THz detection applications.

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Area of Science:

  • Terahertz (THz) technology
  • Semiconductor device physics
  • High-temperature electronics

Background:

  • Terahertz detectors are crucial for various applications, but high-temperature operation remains a challenge.
  • Gallium Nitride high electron mobility transistors (GaN HEMTs) offer potential for high-temperature electronic devices.

Purpose of the Study:

  • To fabricate and demonstrate a high-temperature THz detector using a GaN HEMT.
  • To characterize the performance of the THz detector over a wide temperature range (room temperature to 200°C).
  • To analyze the advantages of GaN HEMTs for high-temperature THz detection.

Main Methods:

  • Fabrication of a THz detector utilizing GaN HEMT with nano antenna structures.
  • Characterization of THz responsivity and noise equivalent power (NEP) at 0.14 THz radiation.
  • Temperature-dependent measurements from room temperature to 200°C.

Main Results:

  • The GaN HEMT THz detector successfully operated up to 200°C.
  • High responsivity (Rv) of 15.5 kV/W at room temperature and 2.7 kV/W at 200°C.
  • Low noise equivalent power (NEP) of 0.58 pW/Hz^0.5 at room temperature and 10 pW/Hz^0.5 at 200°C.

Conclusions:

  • GaN HEMTs are suitable for high-temperature THz detection.
  • The developed THz detector exhibits promising performance at elevated temperatures.
  • Understanding the physical mechanisms of temperature dependence is crucial for further optimization.