High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Area of Science:

• Terahertz (THz) technology
• Semiconductor device physics
• High-temperature electronics

Background:

• Terahertz detectors are crucial for various applications, but high-temperature operation remains a challenge.
• Gallium Nitride high electron mobility transistors (GaN HEMTs) offer potential for high-temperature electronic devices.

Purpose of the Study:

• To fabricate and demonstrate a high-temperature THz detector using a GaN HEMT.
• To characterize the performance of the THz detector over a wide temperature range (room temperature to 200°C).
• To analyze the advantages of GaN HEMTs for high-temperature THz detection.

Main Methods:

• Fabrication of a THz detector utilizing GaN HEMT with nano antenna structures.
• Characterization of THz responsivity and noise equivalent power (NEP) at 0.14 THz radiation.
• Temperature-dependent measurements from room temperature to 200°C.

Main Results:

• The GaN HEMT THz detector successfully operated up to 200°C.
• High responsivity (Rv) of 15.5 kV/W at room temperature and 2.7 kV/W at 200°C.
• Low noise equivalent power (NEP) of 0.58 pW/Hz^0.5 at room temperature and 10 pW/Hz^0.5 at 200°C.

Conclusions:

• GaN HEMTs are suitable for high-temperature THz detection.
• The developed THz detector exhibits promising performance at elevated temperatures.
• Understanding the physical mechanisms of temperature dependence is crucial for further optimization.