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Ultraclean Single Photon Emission from a GaN Quantum Dot.
Munetaka Arita1, Florian Le Roux1, Mark J Holmes1
1Institute for Nano Quantum Information Electronics and ‡Institute of Industrial Science, The University of Tokyo , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.
Nano Letters
|April 25, 2017
Summary
We developed high-quality Gallium Nitride (GaN) quantum dots (QDs) for efficient room-temperature single-photon emission. These GaN QDs exhibit suppressed spectral diffusion and record narrow linewidths, enabling high-purity ultraviolet single-photon generation.
Area of Science:
- Solid-state physics
- Quantum optics
- Materials science
Background:
- Wide bandgap III-nitride quantum dots (QDs) show promise for solid-state single-photon sources.
- Spectral diffusion in conventional GaN QDs limits their performance, particularly at room temperature.
Purpose of the Study:
- To demonstrate ultraclean emission from single Gallium Nitride (GaN) quantum dots (QDs).
- To suppress spectral diffusion and achieve high-purity single-photon generation for quantum information applications.
Main Methods:
- Fabrication of GaN QDs at macrostep edges within a GaN/AlGaN quantum well.
- High-temperature growth to reduce defect density.
- Characterization of emission properties, including linewidth and second-order coherence (g(2)(0)).
Main Results:
- Achieved ultraclean emission from single GaN QDs with heavily suppressed spectral diffusion (over 1 order of magnitude lower than conventional QDs).
- Obtained a record narrow linewidth of 87 μeV and assessed homogeneous broadening at 27 μeV.
- Generated ultraviolet single-photons with unprecedented purity (g(2)(0) = 0.02).
Conclusions:
- High-quality GaN QDs with suppressed spectral diffusion are realized.
- These findings pave the way for exploring III-nitride optoelectronics.
- Enables the development of room-temperature single-photon quantum information systems.
