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Updated: Mar 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Valley filtering in graphene due to substrate-induced mass potential
D R da Costa1,2, A Chaves1, G A Farias1
1Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60455-900 Fortaleza, Ceará, Brazil.
We propose a graphene valley filter using a substrate-induced mass kink. This device efficiently filters electrons, showing robust valley polarization even with defects, for low-energy applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Graphene's unique electronic properties, such as sublattice symmetry breaking by substrates, lead to unidirectional chiral states.
- These chiral states offer potential for novel electronic devices like valley filters.
Purpose of the Study:
- To propose and investigate a graphene-based valley filter utilizing a substrate-induced mass kink.
- To explore the transport properties and valley filtering efficiency of this novel graphene device.
Main Methods:
- Solving the time-dependent Schrödinger equation for the tight-binding Hamiltonian.
- Simulating the time evolution of a Gaussian wave packet through the proposed structure.
- Analyzing the transport properties of the graphene quantum point contact.
Main Results:
- Efficient valley filtering is achieved for low-energy electrons within the lowest sub-band.
- Optimal filtering requires specific channel dimensions (long and narrow).
- Valley polarization demonstrates robustness against impurities and defects within the channel.
Conclusions:
- The proposed substrate-induced mass kink is an effective mechanism for creating a graphene valley filter.
- The device shows promise for applications requiring high valley polarization, even in the presence of imperfections.
- Further research can optimize device design for enhanced performance in low-energy electronics.
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