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Electron inelastic mean free path at energies below 100 eV
1Theoretical Physics Research Group, Ton Duc Thang University, Ho Chi Minh City, Vietnam.
Summary
We calculated electron inelastic mean free paths (IMFPs) for 10 elemental solids below 100 eV. Our results for hot-electron inelastic lifetimes offer a valuable alternative for spectroscopy and microscopy.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Accurate knowledge of electron inelastic mean free paths (IMFPs) is crucial for interpreting data from electron spectroscopy and microscopy.
- Existing methods for calculating IMFPs can be computationally intensive or limited in applicability.
Purpose of the Study:
- To determine the IMFPs for 10 elemental solids at low electron energies (< 100 eV).
- To provide an alternative computational approach for evaluating hot-electron inelastic lifetimes.
Main Methods:
- Utilized the dielectric formalism to calculate energy-loss functions.
- Employed the adiabatic local-density approximation within time-dependent density-functional theory.
- Calculated IMFPs for V, Fe, Ni, Mo, Pd, Ag, Ta, W, Pt, and Au.
Main Results:
- Determined IMFPs for 10 elemental solids below 100 eV.
- IMFPs calculated a few eV above the Fermi energy show good agreement with ab initio GW approximation results.
- The dielectric formalism approach provides reliable IMFP values.
Conclusions:
- The dielectric formalism, using TDDFT, offers a viable method for calculating low-energy IMFPs.
- This approach provides a valuable alternative for assessing hot-electron inelastic lifetimes in materials.
- The findings support the application of these calculations in electron spectroscopy and microscopy.
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