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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Weiming Lü1, Changjian Li2,3, Limei Zheng1

  • 1Condensed Matter Science and Technology Institute, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China.

Advanced Materials (Deerfield Beach, Fla.)
|April 26, 2017
PubMed
Summary

This study shows that barium titanate ferroelectric tunnel junctions exhibit both oxygen vacancy migration and ferroelectric switching. This dual mechanism creates multi-state nonvolatile memory devices with enhanced performance.

Keywords:
ferroelectric tunnel junctionsmulti-nonvolatile memoriesoxide interfacesoxygen vacanciesresistive switching

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