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Published on: July 24, 2015
Electronic Properties of Graphene-PtSe2 Contacts
Shahid Sattar1, Udo Schwingenschlögl1
1Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.
Abstract:
In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.
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