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All-Silicon Switchable Magnetoelectric Effect through Interlayer Exchange Coupling.

Hang Liu1,2, Jia-Tao Sun1, Hui-Xia Fu1

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry
|April 28, 2017
PubMed
Summary
This summary is machine-generated.

Researchers discovered a switchable magnetoelectric (ME) effect in silicon thin films. This breakthrough enables electric-field control of magnetism, paving the way for all-silicon spintronics and data storage applications.

Keywords:
density functional theory calculationsinterlayer exchange couplingmagnetoelectric effectsilicon thin filmspin-layer locking effect

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Area of Science:

  • Nanoscale science
  • Condensed matter physics
  • Materials science

Background:

  • The magnetoelectric (ME) effect, coupling electric fields and magnetism, is crucial for nanoscale devices like magnetic tunneling junctions (MTJs).
  • Switchable ME effects in single-composition d0 semiconducting materials are essential for developing all-silicon spintronics compatible with current industry standards.
  • Existing ferromagnetic materials often lack the necessary reversal switching capabilities for advanced applications.

Purpose of the Study:

  • To investigate the potential of pristine Si(111)-3×3 R30° (Si3) reconstructed surfaces in thin films for exhibiting a switchable linear ME effect.
  • To explore the feasibility of controlling magnetic moment direction using an external electric field in silicon-based materials.
  • To identify novel semiconducting materials for efficient and switchable data storage in silicon electronics.

Main Methods:

  • Density Functional Theory (DFT) calculations were employed to model and analyze the electronic and magnetic properties of Si3 thin films.
  • The study focused on thin films with thicknesses less than eleven bilayers to investigate surface-mediated effects.
  • Interlayer exchange coupling in the antiferromagnetic regime was analyzed to understand the mechanism of the ME effect.

Main Results:

  • Pristine Si3 reconstructed surfaces of thin films support a significant linear ME effect with switchable magnetic moment direction under an external electric field.
  • The calculated ME effect coefficient is substantially larger (up to four times) than that observed in ferromagnetic iron (Fe) films.
  • The enhanced ME effect is attributed to spin-dependent screening by spin-polarized Dirac fermions.

Conclusions:

  • The findings demonstrate the potential of Si3 thin films to exhibit a switchable linear ME effect, crucial for spintronics.
  • This research offers a pathway towards developing all-silicon spintronic devices with switchable data storage capabilities.
  • The prediction of a larger ME effect in silicon compared to iron films highlights its promise for future electronic applications.