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Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device

Jun Ge1, Mohamed Chaker1

  • 1Institut National de Recherche Scientifique, Centre Énergie Matériaux Télécommunications , 1650, Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada.

ACS Applied Materials & Interfaces
|April 29, 2017
PubMed

Keywords:
oxygen vacanciesresistive memoryresistive switching modesingle-crystaltitanium dioxide

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