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Valence Bond Theory02:42

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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

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Large spin Hall angle in vanadium film.

T Wang1, W Wang1,2, Y Xie1

  • 1Department of Physics and Astronomy, University of Delaware, Newark, Delaware, 19716, USA.

Scientific Reports
|May 4, 2017
PubMed
Summary

Vanadium films with mixed crystal structures exhibit a large spin Hall angle, comparable to platinum. This discovery highlights the potential of 3d light metals for spintronic applications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • The spin Hall effect (SHE) is crucial for spintronic devices.
  • Heavy metals like platinum and tantalum are known for large SHE, but 3d light metals are less explored.

Purpose of the Study:

  • To investigate the spin Hall angle in vanadium (V) films.
  • To explore the influence of crystalline structure and processing conditions on SHE in V films.
  • To assess the potential of 3d light metals for spintronic applications.

Main Methods:

  • Sputter-growth of vanadium films at room temperature and 400°C.
  • Structural characterization of vanadium films (bcc and bct phases).
  • Measurement of spin Hall angle and resistivity.
  • Determination of spin diffusion length.

Main Results:

  • Room-temperature sputter-grown V films showed a large spin Hall angle (θV = -0.071 ± 0.003), comparable to platinum.
  • V films grown at 400°C exhibited a smaller spin Hall angle (θV_bcc = -0.012 ± 0.002).
  • High resistivity (>200 μΩ∙cm) and a long spin diffusion length (16.3 nm) were observed in the sputter-grown V films.

Conclusions:

  • Specific crystalline structures, like the mixture of bct and bcc phases in V films, can lead to a significant spin Hall effect.
  • 3d light metals, including vanadium, are promising candidates for materials with large spin Hall angles.
  • This research broadens the material scope for developing efficient spintronic devices.