Group-velocity dispersion in SOI-based channel waveguides with reduced-height

Area of Science:

• Photonics and Optical Engineering
• Materials Science

Background:

• Silicon-on-insulator (SOI) technology is crucial for integrated photonics.
• Understanding group-velocity dispersion (D) in nanoscale waveguides is essential for optical communication systems.

Purpose of the Study:

• To experimentally characterize group-velocity dispersion (D) in 100-nm high rectangular strip waveguides.
• To compare experimental dispersion data with numerical predictions.
• To investigate the effect of waveguide width on dispersion characteristics.

Main Methods:

• Fabrication of silicon-on-insulator rectangular strip waveguides with 100-nm height.
• Experimental measurement of group-velocity dispersion (D) in the telecom C-band (1550 nm).
• Numerical simulations to predict dispersion coefficients.
• Comparison of experimental results with numerical predictions.

Main Results:

• 100-nm high SOI waveguides exhibit normal dispersion.
• The absolute value of the dispersion coefficient (D) decreases as waveguide width increases.
• Measured D at 1550 nm ranges from -8130 to -3900 ps/(nm·km) for widths from 500 to 800 nm.

Conclusions:

• Experimental validation of normal dispersion in sub-100nm SOI waveguides.
• Demonstrated tunability of dispersion by adjusting waveguide width.
• Provides crucial data for designing dispersion-engineered photonic integrated circuits.