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Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Yadan Zhu1,2, Taiping Lu3,4, Xiaorun Zhou1,2

  • 1Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, 030024, Taiyuan, China.

Nanoscale Research Letters
|May 6, 2017
PubMed

Keywords:
HydrogenInGaNMultiple quantum wellsTreatment temperature

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