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Published on: July 5, 2019
Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer
Han Peng1, Niels B M Schröter1, Jianbo Yin2
1Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK.
Twisted multilayer graphene exhibits tunable electronic properties, enabling novel optoelectrical devices. Researchers engineered van Hove singularities (vHSs) in graphene by controlling the twist angle, achieving broadband wavelength selectivity for applications like photodetectors.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Graphene possesses exceptional electronic properties, making it suitable for advanced electronic applications.
- The electronic structure of multilayer graphene can be precisely controlled by introducing twist angles between layers.
Purpose of the Study:
- To systematically investigate the evolution of band structures and van Hove singularities (vHSs) in twisted bilayer and trilayer graphene.
- To explore the tunability of vHS binding energy with varying twist angles.
Main Methods:
- Angle-resolved photoemission spectroscopy (ARPES) with sub-micrometer spatial resolution.
- Fabrication and characterization of twisted bilayer and trilayer graphene samples with twist angles ranging from 5° to 31°.
Main Results:
- Direct observation of a doping effect in multilayer graphene systems.
- Formation and wide tunability (over 2 eV) of vHSs in bilayer graphene with twist angle.
- Observation of multiple vHSs at different binding energies in trilayer graphene.
Conclusions:
- Twisted multilayer graphene offers a versatile platform for engineering electronic band structures.
- The tunable vHSs provide a promising material basis for optoelectrical applications requiring broadband wavelength selectivity (IR to UV).
- Demonstrated potential in wavelength-selective photodetector applications.
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