Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET01:16

MOSFET

1.5K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.5K
Characteristics of MOSFET01:17

Characteristics of MOSFET

1.1K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.1K
Field Effect Transistor01:29

Field Effect Transistor

1.4K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

906
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
906
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

927
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
927
MOSFET Amplifiers01:17

MOSFET Amplifiers

598
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
598

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Renewed Response to Pembrolizumab After Salvage Radiotherapy for Oligoprogression in Advanced NSCLC: A Case Report.

Respirology case reports·2026
Same author

Photoinduced Structural Instability Toward the Superionic Phase Transition in Cu<sub>2</sub>S.

The journal of physical chemistry letters·2026
Same author

The association between adult height and the incidence of diabetes in a Japanese working population: a prospective study exploring the possible role of cohort effects.

BMC public health·2026
Same author

Stable Au(III) Benzohomoporphyrin: Synthesis, Structure, Near-Infrared Absorption, and Superoxide Radical Generation.

Inorganic chemistry·2026
Same author

Wurtzite-Chalcopyrite Crystal Polymorphism in CuGaS<sub>2</sub> Nanoparticles Dictates the Localized Surface Plasmon Resonance.

Chemistry (Weinheim an der Bergstrasse, Germany)·2026
Same author

Long-Term Outcomes of IgM-Positive Plasma Cell Tubulointerstitial Nephritis.

Kidney international reports·2026

Related Experiment Video

Updated: Mar 2, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Molecular floating-gate single-electron transistor.

Makoto Yamamoto1, Yasuo Azuma2, Masanori Sakamoto3

  • 1School of Science and Technology, Meiji University, Kawasaki, 214-8571, Japan.

Scientific Reports
|May 10, 2017
PubMed
Summary

Molecular floating-gate single-electron transistors (MFG-SETs) show stable, reversible switching. Tetra-tert-butyl copper phthalocyanine molecules act as photoreactive gates, enabling molecular charging phenomena investigations in nanoelectronics.

More Related Videos

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

774
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Related Experiment Videos

Last Updated: Mar 2, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

774
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Area of Science:

  • Nanoelectronics
  • Molecular electronics
  • Single-electron transistors

Background:

  • Single-electron transistors (SETs) are crucial for quantum computing and sensitive measurements.
  • Molecular floating gates offer novel control mechanisms in nanoelectronic devices.
  • Tetra-tert-butyl copper phthalocyanine (ttbCuPc) exhibits photoreactive properties.

Purpose of the Study:

  • To investigate the reversible switching behaviors of a molecular floating-gate single-electron transistor (MFG-SET).
  • To explore the potential of ttbCuPc molecules as photoreactive floating gates.
  • To demonstrate the application of MFG-SETs for studying molecular charging phenomena.

Main Methods:

  • Fabrication of a SET device using gold nanoparticles as Coulomb islands.
  • Integration of a few tetra-tert-butyl copper phthalocyanine (ttbCuPc) molecules as floating gates.
  • Characterization of device switching behavior under light irradiation and applied voltages.

Main Results:

  • Single-electron charging of ttbCuPc molecules induced a significant potential shift in the Coulomb island.
  • A stable device state with a retention time of several hours was achieved.
  • An additional, shorter-lived state was observed upon 700 nm light irradiation, corresponding to doubly charged ttbCuPc.

Conclusions:

  • MFG-SETs offer a viable platform for exploring single-molecule functionality in nanoelectronics.
  • The photoreactive nature of ttbCuPc enables reversible control over the transistor's potential.
  • This work highlights the potential of molecular floating gates for advanced electronic applications and fundamental studies of molecular charging.