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Triethanolamine doped multilayer MoS2 field effect transistors.

Min-Yeul Ryu1, Ho-Kyun Jang, Kook Jin Lee

  • 1School of Electrical Engineering, Korea University, Seoul 02481, South Korea. gtkim@korea.ac.kr.

Physical Chemistry Chemical Physics : PCCP
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Summary
This summary is machine-generated.

Chemical doping using triethanolamine (TEOA) enhances multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs). This surface doping boosts electrical performance, including a tenfold increase in mobility, offering a high-performance alternative to ion implantation.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Chemical doping offers an alternative to ion implantation for modifying two-dimensional materials.
  • Molybdenum disulfide (MoS2) is a key material in emerging electronic applications.

Purpose of the Study:

  • To investigate chemical doping as a method to enhance the electrical performance of multilayer MoS2 field-effect transistors (FETs).
  • To explore the use of triethanolamine (TEOA) as an n-type dopant for MoS2 FETs.

Main Methods:

  • Fabrication of multilayer MoS2 FETs.
  • Surface doping of MoS2 FETs using triethanolamine (TEOA).
  • Electrical characterization at room temperature, including mobility, subthreshold swing, and contact resistance measurements.

Main Results:

  • TEOA doping significantly enhanced the electrical performance of multilayer MoS2 FETs at room temperature.
  • Field-effect mobility increased by approximately 10 times, reaching ~30 cm2 V-1 s-1.
  • Improvements were observed in subthreshold swing and contact resistance, with doping levels controllable via heat treatment.

Conclusions:

  • Chemical doping with TEOA provides an effective and controllable method for improving the performance of multilayer MoS2 FETs.
  • This approach presents a promising, high-performance alternative to conventional ion implantation for 2D material device fabrication.
  • The study elucidates the mechanism behind enhanced electrical properties in multilayer MoS2 through surface doping.