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New Insights into Sequential Infiltration Synthesis.

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Sequential infiltration synthesis (SIS) hardens polymer resists for high-resolution patterning. This study reveals SIS kinetics and structural changes, improving lithography applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Polymer Chemistry

Background:

  • Sequential infiltration synthesis (SIS) is a technique derived from atomic layer deposition (ALD).
  • SIS infuses polymers with inorganic materials using sequential precursor exposures.
  • It enhances polymer resists for robust lithography and high-resolution patterning.

Purpose of the Study:

  • Investigate the mechanism of Al2O3 SIS in a poly(styrene-block-methyl methacrylate) (PS-b-PMMA) diblock copolymer.
  • Elucidate the kinetics and dynamic structural changes during the SIS process.
  • Provide insights for optimizing SIS lithography applications.

Main Methods:

  • In-situ Fourier transform infrared absorption spectroscopy.
  • Quartz-crystal microbalance measurements.
  • Synchrotron grazing incidence small angle X-ray scattering (GISAXS).
  • High-resolution scanning transmission electron microscope tomography.

Main Results:

  • Trimethyl aluminum (TMA) adsorption in PMMA proceeds via a weakly-bound intermediate.
  • SIS kinetics are diffusion-limited, with desorption being 10 times slower than adsorption.
  • Dynamic structural alterations occur during individual precursor exposures.

Conclusions:

  • The study provides a detailed understanding of the SIS mechanism in PS-b-PMMA.
  • Findings highlight the importance of precursor adsorption, diffusion kinetics, and dynamic structural changes.
  • These insights are crucial for advancing SIS lithography for precise material patterning.