First-principles equation-of-state table of silicon and its effects on high-energy-density plasma simulations

Using density-functional theory-based molecular-dynamics simulations, we have investigated the equation of state for silicon in a wide range of plasma density and temperature conditions of ρ=0.001-500g/cm^{3} and T=2000-10^{8}K. With these calculations, we have established a first-principles equation-of-state (FPEOS) table of silicon for high-energy-density (HED) plasma simulations. When compared with the widely used SESAME-EOS model (Table 3810), we find that the FPEOS-predicted Hugoniot is ∼20% softer; for off-Hugoniot plasma conditions, the pressure and internal energy in FPEOS are lower than those of SESAME EOS for temperatures above T ≈ 1-10 eV (depending on density), while the former becomes higher in the low-T regime. The pressure difference between FPEOS and SESAME 3810 can reach to ∼50%, especially in the warm-dense-matter regime. Implementing the FPEOS table of silicon into our hydrocodes, we have studied its effects on Si-target implosions. When compared with the one-dimensional radiation-hydrodynamics simulation using the SESAME 3810 EOS model, the FPEOS simulation showed that (1) the shock speed in silicon is ∼10% slower; (2) the peak density of an in-flight Si shell during implosion is ∼20% higher than the SESAME 3810 simulation; (3) the maximum density reached in the FPEOS simulation is ∼40% higher at the peak compression; and (4) the final areal density and neutron yield are, respectively, ∼30% and ∼70% higher predicted by FPEOS versus the traditional simulation using SESAME 3810. All of these features can be attributed to the larger compressibility of silicon predicted by FPEOS. These results indicate that an accurate EOS table, like the FPEOS presented here, could be essential for the precise design of targets for HED experiments.